march 2010 doc id 17306 rev 1 1/9 9 STPS40100HR aerospace 2 x 20 a - 100 v schottky rectifier features forward current: 2 x 20 a repetitive peak voltage: 100 v low forward voltage drop: 0.9 v maximum junction temperature: 175 c negligible switching losses low capacitance high reverse avalanche surge capability hermetic packages target radiation qualification: ? 150 krad (si) low dose rate ? 1 mrad high dose rate escc qualified description this power schottky rectifier is designed and packaged to comply with the escc5000 specification for aerospace products. housed in hermetically sealed packages both surface mount and through hole, it is ideal for use in applications for aerospace and other harsh environments. the STPS40100HR is intended for use in medium voltage application and particularly, in high frequency circuits where low switching losses and low noise are required. to-254 table 1. device summary order code escc detailed specification quality level configuration package mass eppl stps40100c2fsy1 - engineering model double die, common cathode pin 2 t0-254 10.0 g - stps40100c2fsyhr 5106/019/01 escc flight y www.st.com
characteristics STPS40100HR 2/9 doc id 17306 rev 1 1 characteristics table 2. absolute maximum ratings symbol characteristic value unit i fsm forward surge current (per diode) (1) 1. sinusoidal pulse of 10 ms duration 300 a v rrm repetitive peak reverse voltage (2) 2. pulsed, duration 5 ms, f = 50 hz 100 v i rrm repetitive peak reverse current (3) 3. pulsed, duration 2 s, f = 1 khz 1a i o average output rect ified current (50% duty cycle): (4) , (5) per diode per device 4. for t case +132c per device and t case +148c per diode, derate linearly to 0 a at +175c. 5. the ?per device? ratings apply only wh en both anode terminals are tied together. 20 40 a i f(rms) forward rms current (per diode) 30 a t op operating temperature range (6) (case temperature) 6. for devices with hot solder dip l ead finish all testing performed at t amb > +125 c are carried out in a 100% inert atmosphere. -65 to +175 c t j junction temperature +175 c t stg storage temperature range (6) -65 to +175 c t sol soldering temperature: for to-254 (7) 7. duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same lead shall not be resoldered until 3 minutes have elapsed. +260 c dv/dt critical rate of rise of reverse voltage 10000 v/s table 3. thermal resistance symbol characteristic value unit r th(j-c) (1) 1. package mounted on infinite heatsink thermal resistance, junction to case per diode per device 1.5 1.2 c/w
STPS40100HR characteristics doc id 17306 rev 1 3/9 s table 4. electrical measurements at ambiant temperature (per diode), t amb = 22 3 c symbol characteristic mil-std-750 test method test conditions values units min. max. i r1 reverse current 4016 dc method, v r = 100 v - 30 a i r2 dc method, v r = 50 v - 5 a v f1 (1) forward voltage 4011 pulse method, i f = 5 a - 610 mv v f2 (1) pulse method, i f = 10 a - 730 mv v f3 (1) pulse method, i f = 20 a - 900 mv c capacitance 4001 v r = 10 v, f = 1 mhz - 1 nf z th(j-c) (2) relative thermal impedance, junction to case 3101 i h = 15 to 40 a, t h = 50 ms i m = 50 ma, t md = 100 s calculate v f (3) c/w 1. pulse width 300s, duty cycle 2% 2. performed only during screening tests parameter drift values (initial measurem ents for htrb), go-no-go. 3. the limits for vf shall be defined by the manufacturer on ever y lot in accordance with mil-std-750 method 3101 and shall guarantee the r th(j-c) limits specified in maximum ratings. table 5. electrical measurements at high and low temperatures (per diode) symbol characteristic mil-std-750 test method test conditions (1) values units min. max. i r1 reverse current 4016 t case = +125 (+0, -5) c dc method, v r = 100 v -20ma i r2 t case = +125 (+0, -5) c dc method, v r = 50 v -7.5ma v f2 (2) forward voltage 4011 t case = +125 (+0, -5) c pulse method, i f = 10 a -660mv v f3 (2) t case = +125 (+0, -5) c pulse method, i f = 20 a -850mv t case = -55 (+5, -0) c pulse method, i f = 20 a -950mv 1. read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. alternatively a 100% inspection may be performed. 2. pulse width 300s, duty cycle 2%
configurations STPS40100HR 4/9 doc id 17306 rev 1 2 configurations figure 1. available device configuration 2 1 3 stps40100c2fsy1 stps40100c2fsyhr terminal 1: terminal 2: terminal 3: anode a common cathode anode b
STPS40100HR package information doc id 17306 rev 1 5/9 3 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 2. metal flange mount package (to-254 (a) ), 3 lead dimension definitions a. the terminal identification is specif ied by the device configuration. see figure 1 for terminal connections b a c d e ?f g h ?i j k k l ?m n r1 r2 1 2 3
package information STPS40100HR 6/9 doc id 17306 rev 1 table 6. metal flange mount package (to-254), 3-lead dimension values reference dimension in millimetres dimlension in inches min. max. min. max. a 13.59 13.84 0.535 0.545 b 13.59 13.84 0.535 0.545 c 20.07 20.32 0.790 0.800 d 6.3 6.7 0.248 0.264 e 1 3.9 0.039 0.154 ?f 3.5 3.9 0.138 0.154 g 16.89 17.4 0.665 0.685 h 6.86 bsc 0.270 bsc ?i (1) 1. 3 locations 0.89 1.14 0.035 0.045 j 3.81 bsc 0.150 bsc k 3.81 bsc 0.150 bsc l 12.95 14.5 0.510 0.571 ?m 3.05 typ. 0.120 typ. n - 0.71 - 0.028 r1 (2) 2. radius of heatsink flange corner - 4 locations - 1 - 0.039 r2 (3) 3. radius of body corner - 4 locations 1.65 typ. 0.065
STPS40100HR ordering information doc id 17306 rev 1 7/9 4 ordering information table 7. ordering information order code escc detailed specification package lead finish marking eppl mass (g) packing stps40100c2fsy1 - to-254 gold stps40100c2fsy1 + beo - 10.0 strip pack stps40100c2fsyhr 5106/019/01 solder dip 510601901 + beo y
revision history STPS40100HR 8/9 doc id 17306 rev 1 5 revision history table 8. document revision history date revision changes 26-mar-2010 1 initial release.
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